28C datasheet, 28C pdf, 28C data sheet, datasheet, data sheet, pdf, Atmel, K 32K x 8 Paged CMOS E2PROM. 28C Microchip. K (32K x 8) CMOS Electrically Erasable PROM. PIN CONFIGURATION. Top View. A 1 A7. A A *NC. Vcc. WE. . A2. 5 WE. A dimensions section on page 14 of this data sheet. ORDERING INFORMATION. PLCC−32 . 28C− 28C− Units. Min. Max. Min. Max. tRC.
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Following the initiation of a write cycle, the device will automatically write the latched data using an internal control timer.
28C – 28C K ns Parallel EEPROM Technical Data
Search field Part name Part description. Atmel has incorporated both hardware datasyeet software features that will protect the memory against inadvertent writes. It should be noted, that once protected the host may still perform a byte or page write to the AT28C When CE and Ddatasheet are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. All Output Voltages with Respect to Ground The data is latched by the first rising edge of CE or WE.
28C256 Datasheet PDF
Please see Soft- ware Chip Erase application note for details. Hardware and Software Data Protection. Fast Read Access Time – ns.
The data in the enable and disable command se- quences is not written to the device and the datashet ad- dresses used in the sequence may be written with data in either a byte or page write operation. OE to Output Delay. Once the end of a write cycle has been detected a new access for a read or write can begin.
Only bytes which are specified for writing will be written; unnecessary cycling of other bytes within the page does not occur. Once a byte write has been started it will automatically time itself to completion. After writing the 3-byte command sequence and after t. Address to Output Delay.
An optional software data protection mechanism is available to guard against inad- vertent writes. When enabled, the software data protection SDPwill prevent inadvertent writes.
The device utilizes internal error correction for extended endurance and improved data retention characteristics. The bytes may be loaded in any order and may be altered within the same load period. 28c265 precautions are not taken, inad- vertent writes may occur during transitions of the host sys- tem power supply. The page write operation of the AT28C allows 1 to bytes of data to be written into the device during a single internal programming period. All bytes dur- ing a page write operation must reside on the same page as defined by the state of the A6 – A14 inputs.
Reading the toggle dahasheet may begin at any time during the write cycle. PROM memory are available to the user for device. Once a programming operation has been initiated and for the duration of t.
28C Datasheet pdf – K 32K x 8 Paged CMOS E2PROM – Atmel
All command se- quences must conform to the page write timing specifica- tions. X can be V. Automatic Page Write Operation.
PROM for device identification or tracking. This is done by pre- ceding the data to be written by the same 3-byte command sequence used to enable SDP.
This dual- line control gives designers flexibility in preventing bus contention in their system. This is a stress rating only and functional operation of the device at these or any daasheet conditions beyond those indi- cated in the operational sections of this specification is not implied.
The device contains a byte page register to allow writ- ing of up to bytes simultaneously. When the device is deselected, the CMOS standby current is less than A software controlled data protection feature has been implemented on the AT28C Refer to AC Programming Waveforms. After setting SDP, any attempt to write to the device with- out the 3-byte command sequence will start the internal write timers.